EUROPIUM SILICATE THIN FILMS FABRICATED BY RF MAGNETRON SPUTTERING AND THERMAL TREATMENT
PDF

Keywords

Sputtering
photoluminescence
photoelectron spectroscopy

Abstract

We report the fabrication and optical characteristics of europium silicate thin films. Layer structures of Eu2O3/SiOX/Si (100) were deposited by an rf-sputtering method and annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of SiOX layer: One was deposited by sputtering using SiO2 target (Ar gas at a rate of 50 sccm) and the other was deposited by reactive sputtering using Si target (Ar gas at a rate of 45 sccm, with an O2 gas at a rate of 5 sccm). Photoluminescence peak at 430 nm was observed in the sample composed of SiOx  interlayer sputtered from SiO2 target. In comparison, PL peak at 570 nm was observed in the other sample, the SiOx layer of which was deposited by reactive sputtering from Si target. The compositional distributions of these samples were analyzed by X-ray photoelectron spectroscopy (XPS).

https://doi.org/10.29037/ajstd.195
PDF

References

Tamura, T., Setomoto, T., and Taguchi, T. (2000), J. Luminescence, vol. 87-89, p. 1180.

Uchida, Y., Setomoto, T., Taguchi, T., Nakagawa, Y., and Miyazaki, K. (2000), In Display Technologies III, vol. 4079, p. 120, The International Society for Optical Engineering, Bellingham, WA.

Mueller-Mach, R., Mueller, G.O., Krames, M.R., and Trottier, T. (2002), IEEE J. Sel. Topics Quantum Elecrton., vol. 8, p. 339.

Shafer, M.W., McGuire, T.R., and Suits, J.C. (1963), Phys. Rev. Lett., vol. 11, p. 251.

Kaldis, E., Streit, P., and Wachter, P. (1971), J. Phys. Chem. Solids, vol. 32, p. 159.

Machida, K., Adachi, G., Shiokawa, J., Shimada, M., Koizumi, M., Suito, K., and Onodera, A. (1982), Inorg. Chem., vol. 21, p. 1512.

Qi, J., Matsumoto, T., Tanaka, M., and Masumoto, Y. (1999), Appl. Phys. Lett., vol. 74, p. 3203.

Choi, W., Lee, H., Kim, E., Kim, Y., Park, C., Kim, H., and Lee, J. (1999), Appl. Phys. Lett., vol. 75, p. 2389.

Yi, S. (2004), J. Korean Phys. Soc., vol. 45, p. 1625.

Potdevin, A., Chadeyron, G., Boyer, D., Caillier, B., and Mahiou, R. (2005), J. Phys. D: Appl. Phy., vol. 38, p. 3251.

Park, J., Back, N., Hong, K., Kim, C., Yoo, D., Kwak, M., Han, J., Hong, S., Moon, B., Seo, H., and Choi, B. (2005), J. Korean Phys. Soc., vol. 47, p. 368.

Bae, J., Shim, K., Moon, B., Kim, S., Jeong, J., Yi, S., and Kim, J. (2005), J. Korean Phys. Soc., vol. 46, p. 1193.

Physical Electronics, Inc., 6509 Flying Cloud Drive, Eden Prairie, MN 55344.

Downloads

Download data is not yet available.